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Categories | MOSFET Power Electronics |
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Brand Name: | onsemi |
Model Number: | FDB035N10A |
Place of Origin: | original |
MOQ: | 1 |
Price: | Negotiable |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 999999 |
Delivery Time: | 1-3 days |
Packaging Details: | standard |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Rds On (Max) @ Id, Vgs: | 3.5mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 116 nC @ 10 V |
Vgs (Max): | ±20V |
FDB035N10A N-Channel MOSFET Power Electronics High-Performance Reliable Switching Solution for Power Conversion Applications
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 75A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 7295 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 333W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | D²PAK (TO-263) | |
Package / Case |
Product Listing: ON Semiconductor FDB035N10A MOSFET Power Electronics
Product Description: The ON Semiconductor FDB035N10A is a MOSFET Power Electronics device designed for high-power applications. It is intended for use in a wide range of switching applications including DC-DC converters, motor drives, and other high-power circuits.
Specifications:
• Drain-Source Voltage (Vdss): 100V
• Gate-Source Voltage (Vgs): ±20V
• Drain Current (Id): 35A
• Drain-Source On-State Resistance (RDS(on)): 0.023 ohm
• Power Dissipation (Pd): 58W
• Operating Temperature Range (Tj): -55 to 175°C
• Package/Case: TO-220AB
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