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Categories | MOSFET Power Electronics |
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Brand Name: | Infineon Technologies |
Model Number: | IRFP7530PBF |
Place of Origin: | original |
MOQ: | 1 |
Price: | Negotiable |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 999999 |
Delivery Time: | 1-3 days |
Packaging Details: | standard |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 2mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 411 nC @ 10 V |
IRFP7530PBF MOSFET Power Electronics High Power Handling Fast Switching
Description: The IRFP7530PBF is a N-Channel Enhancement Mode MOSFET from International Rectifier. This MOSFET has a maximum drain source voltage of 500V and a typical gate threshold voltage of 4V. It has a maximum drain current of 61A and a maximum drain source resistance of 0.0084 Ohms. It offers a maximum power dissipation of 225W and a maximum junction temperature of 175°C.
Parameters:
- Drain-Source Voltage: 500V
- Gate Threshold Voltage: 4V
- Drain Current: 61A
- Drain Source Resistance: 0.0084 Ohms
- Power Dissipation: 225W
- Junction Temperature: 175°C
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